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K4F661612D Datasheet, PDF (33/35 Pages) Samsung semiconductor – 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
Industrial Temperature
K4F661612D, K4F641612D
HIDDEN REFRESH CYCLE ( WRITE )
NOTE : D OUT = O P E N
CMOS DRAM
V IH -
RAS
V IL -
V IH -
UCAS
V IL -
V IH -
LCAS
V IL -
V IH -
A
V IL -
V IH -
W
V IL -
VIH -
OE
V IL -
DQ0 ~ DQ7
V IH -
V IL -
DQ8 ~ DQ15
V IH -
V IL -
tC R P
t RC
tRAS
tRC
tR P
tR P
tRAS
tRCD
t RSH
tCHR
tC R P
tR C D
tR S H
tR A D
tASR
t RAH
tASC
ROW
ADDRESS
tR A L
tC A H
COLUMN
ADDRESS
tWCS
tWCH
tW P
tCHR
tW R P
tW R H
tDS
t DH
DATA-IN
tD S
tDH
DATA-IN
D o n ′t c a r e
Undefined