K4F661612D Datasheet, PDF(14/35 Page) Samsung semiconductor – 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE

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K4F661612D Datasheet, PDF (14/35 Pages) Samsung semiconductor – 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE

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Industrial Temperature

K4F661612D, K4F641612D

LOWER BYTE WRITE CYCLE ( EARLY WRITE )

NOTE : D OUT = O P E N

V IH -

RAS

V IL -

V IH -

UCAS

V IL -

VIH -

LCAS

V IL -

V IH -

V IL -

V IH -

V IL -

VIH -

V IL -

DQ0 ~ DQ7

V IH -

V IL -

DQ8 ~ DQ15

V IH -

V IL -

tCRP

tR C

t RAS

tCRP

tR C D

tC S H

tR S H

tC A S

tRAD

tASR

tRAH

tASC

ROW

ADDRESS

tCAH

COLUMN

ADDRESS

tR A L

tWCS

tWCH

tW P

tD S

tDH

DATA-IN

CMOS DRAM

tRP

tRPC

tC R P

D o n â²t care

Undefined

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