K4F661612D Datasheet, PDF (30/35 Pages) Samsung semiconductor – 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE

Industrial Temperature
K4F661612D, K4F641612D
FAST PAGE MODE UPPER BYTE READ - MODIFY - WRITE CYCLE
CMOS DRAM
VIH -
RAS
V IL -
tC S H
tR A S P
tC R P
V IH -
UCAS
V IL -
tC R P
tR C D
tP R W C
tC P
t CAS
tRSH
t CAS
VIH -
LCAS
V IL -
VIH -
A
V IL -
V IH -
W
V IL -
V IH -
OE
V IL -
tRAD
t RAH
tASR
tASC
ROW
ADDR
COL.
ADDR
tRCS
tC A H
tCWD
tAWD
tRWD
tO E A
tCWL
tASC
tCAH
COL.
ADDR
tWP
tRCS
t RAL
tR W L
tC W L
tWP
tCWD
tAWD
tCPWD
tO E A
tRP
tCRP
tRPC
DQ0 ~ DQ7
V I/OH -
V I/OL -
DQ8 ~ DQ15
VI/OH -
VI/OL -
OPEN
tCAC
tOED
tA A
tRAC
tOEZ
t DH
tD S
tCAC
tOED
tA A
tOEZ
tDH
tD S
t CLZ
VALID
DATA-OUT
t CLZ
VALID
DATA-IN
VALID
DATA-OUT
VALID
DATA-IN
D o n ′t care
Undefined