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K4F661612D Datasheet, PDF (12/35 Pages) Samsung semiconductor – 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
Industrial Temperature
K4F661612D, K4F641612D
UPPER BYTE READ CYCLE
N O T E : D IN = O P E N
CMOS DRAM
V IH -
RAS
V IL -
V IH -
UCAS
V IL -
V IH -
LCAS
V IL -
V IH -
A
V IL -
V IH -
W
V IL -
V IH -
OE
V IL -
DQ0 ~ DQ7
V OH -
V OL -
DQ8 ~ DQ15
V OH -
V OL -
tRC
tR A S
tC R P
tC R P
tR C D
tC S H
tR S H
tC A S
tR A D
tA S R
tRAH
ROW
ADDRESS
tA S C
tCAH
COLUMN
ADDRESS
tRAL
tRCS
tAA
tO E A
tR P
tC R P
tR P C
tRRH
tRCH
tOFF
tOEZ
OPEN
tR A C
OPEN
tC A C
tCLZ
DATA-OUT
D o n ′t care
Undefined