K4F661612D Datasheet, PDF(13/35 Page) Samsung semiconductor – 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE

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K4F661612D Datasheet, PDF (13/35 Pages) Samsung semiconductor – 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE

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Industrial Temperature

K4F661612D, K4F641612D

WORD WRITE CYCLE ( EARLY WRITE )

NOTE : D OUT = O P E N

V IH -

RAS

V IL -

V IH -

UCAS

V IL -

V IH -

LCAS

V IL -

V IH -

V IL -

V IH -

V IL -

VIH -

V IL -

DQ0 ~ DQ7

V IH -

V IL -

DQ8 ~ DQ15

V IH -

V IL -

tR A S

tRC

tCRP

tR C D

tCSH

tR S H

tCAS

tCRP

tR C D

tASR

tR A D

tRAH

tA S C

ROW

ADDRESS

tC S H

tR S H

tC A S

tCAH

COLUMN

ADDRESS

tR A L

tWCS

tW P

tWCH

tD S

tDH

DATA-IN

tD S

tDH

DATA-IN

CMOS DRAM

tRP

tCRP

tC R P

D o n â²t c a r e

Undefined

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