K4F661612D Datasheet, PDF (24/35 Pages) Samsung semiconductor – 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE

Industrial Temperature
K4F661612D, K4F641612D
FAST PAGE MODE UPPER BYTE READ CYCLE
CMOS DRAM
V IH -
RAS
V IL -
VIH -
UCAS
V IL -
tCRP
tR A S P
tCSH
tRCD
tPC
tC P
tC A S
¡ó
tPC
tC P
tC A S
tPC
tC A S
tR H C P
tC P
tC A S
tR P
tRPC
V IH -
LCAS
V IL -
V IH -
A
V IL -
tC R P
tASR
tRAD
tRAH t ASC
tC A H
ROW
ADDR
COLUMN
ADDRESS
tASC tCAH
COLUMN
ADDRESS
tRAL
tASC
tCAH tASC
tC A H
COLUMN
ADDR
COLUMN
ADDRESS
tRPC
VIH -
W
VIL -
V IH -
OE
V IL -
tRCS
tRCH
tRCS
tRCH
tRCS
tR C H
tRCS
tR C H
tRRH
tAA
tO E A
tC A C
tAA
tC P A
tOEA
tC A C
tA A
tCPA
tO E A
tCAC
tA A
tC P A
tO E A
DQ0 ~ DQ7
V OH -
V OL -
OPEN
DQ8 ~ DQ15
VOH -
VOL -
tC A C
tRAC
tCLZ
tO F F
tO E Z
VALID
DATA-OUT
tO F F
tO E Z
VALID
DATA-OUT
tOFF
tOEZ
VALID
DATA-OUT
tOFF
tO E Z
VALID
DATA-OUT
D o n ′t c a r e
Undefined