K4F661612D Datasheet, PDF(18/35 Page) Samsung semiconductor – 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE

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K4F661612D Datasheet, PDF (18/35 Pages) Samsung semiconductor – 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE

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Industrial Temperature

K4F661612D, K4F641612D

UPPER BYTE WRITE CYCLE ( OE CONTROLLED WRITE )

NOTE : D OUT = OPEN

V IH -

RAS

V IL -

V IH -

UCAS

V IL -

V IH -

LCAS

V IL -

V IH -

V IL -

VIH -

V IL -

V IH -

V IL -

DQ0 ~ DQ7

V IH -

V IL -

DQ8 ~ DQ15

V IH -

V IL -

tCRP

t RC

tR A S

tRCD

tC S H

tRSH

tC A S

tASR

tRAD

tR A H

tA S C

ROW

ADDRESS

t CAH

COLUMN

ADDRESS

t RAL

tCWL

tRWL

tW P

tOED

tOEH

tD S

tDH

DATA-IN

CMOS DRAM

tR P

tCRP

tRPC

D o n â²t care

Undefined

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