English
Language : 

K4F661612D Datasheet, PDF (29/35 Pages) Samsung semiconductor – 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
Industrial Temperature
K4F661612D, K4F641612D
FAST PAGE MODE LOWER BYTE READ - MODIFY - WRITE CYCLE
CMOS DRAM
V IH -
RAS
V IL -
tCSH
tRASP
tR P
tCRP
tR P C
V IH -
UCAS
V IL -
V IH -
LCAS
V IL -
V IH -
A
V IL -
tCRP
tRCD
tR A D
tR A H
tASR
tASC
ROW
ADDR
COL.
ADDR
tRCS
VIH -
W
V IL -
tPRWC
tCP
tC A S
tRSH
tC A S
tC A H
tCWL
tCWD
tAWD
tRWD
tASC
tCAH
COL.
ADDR
tW P
tRCS
tR A L
tR W L
tC W L
tW P
tC W D
tA W D
tC P W D
tC R P
V IH -
OE
V IL -
DQ0 ~ DQ7
VI/OH -
tOEA
tO E D
tC A C
tAA
tRAC
tOEZ
tD H
tD S
tOEA
tC A C
tOED
tA A
tOEZ
tDH
tDS
VI/OL -
tCLZ
VALID
DATA-OUT
t CLZ
VALID
DATA-IN
VALID
DATA-OUT
VALID
DATA-IN
DQ8 ~ DQ15
VI/OH -
VI/OL -
OPEN
D o n ′t c a r e
Undefined