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K4F661612D Datasheet, PDF (21/35 Pages) Samsung semiconductor – 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
Industrial Temperature
K4F661612D, K4F641612D
UPPER-BYTE READ - MODIFY - WRITE CYCLE
CMOS DRAM
V IH -
RAS
V IL -
VIH -
UCAS
V IL -
VIH -
LCAS
VIL -
V IH -
A
V IL -
V IH -
W
V IL -
V IH -
OE
V IL -
DQ0 ~ DQ7
V I/OH -
V I/OL -
DQ8 ~ DQ15
V I/OH -
VI/OL -
tRAS
tR W C
tR P
tCRP
tRCD
tCRP
tR S H
tC A S
tRAD
tASR tRAH
ROW
ADDR
tASC
tCAH
COLUMN
ADDRESS
tC S H
tA W D
tCWD
tR W D
tOEA
tR P C
tR W L
tC W L
tW P
OPEN
t CLZ
t CAC
tAA
tR A C
tOED
tOEZ
VALID
DATA-OUT
tDS tD H
VALID
DATA-IN
D o n ′t care
Undefined