K4F661612D Datasheet, PDF (28/35 Pages) Samsung semiconductor – 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE

Industrial Temperature
K4F661612D, K4F641612D
FAST PAGE MODE WORD READ-MODIFY-WRITE CYCLE
CMOS DRAM
VIH -
RAS
V IL -
V IH -
UCAS
V IL -
VIH -
LCAS
V IL -
VIH -
A
V IL -
tC S H
tC R P
tRCD
tP R W C
tCAS
tC R P
tRCD
tC A S
tRAD
t RAH
tASR
tASC
ROW
ADDR
COL.
ADDR
tRCS
tCAH
tC W L
tR A S P
tC P
tC P
tR S H
tC A S
tC A S
tASC
COL.
ADDR
tCAH
tRCS
t RAL
tR W L
tC W L
tR P
tCRP
tCRP
V IH -
W
V IL -
tCWD
tAWD
tRWD
tWP
tCWD
tAWD
tCPWD
tW P
V IH -
OE
V IL -
DQ0 ~ DQ7
V I/OH -
V I/OL -
tOEA
tC A C
tAA
tRAC
tOED
tO E Z
tDH
tD S
tO E A
tCAC
tAA
tOED
tOEZ
t DH
tD S
tCLZ
VALID
DATA-OUT
t CLZ
VALID
DATA-IN
VALID
DATA-OUT
VALID
DATA-IN
DQ8 ~ DQ15
VI/OH -
tC A C
tA A
tR A C
tOED
tOEZ
tDH
tD S
tCAC
tA A
tOED
tO E Z
tDH
tDS
VI/OL -
tCLZ
VALID
DATA-OUT
t CLZ
VALID
DATA-IN
VALID
DATA-OUT
VALID
DATA-IN
D o n ′t care
Undefined