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K4F661612D Datasheet, PDF (20/35 Pages) Samsung semiconductor – 4M X 16BIT CMOS DYNAMIC RAM WITH FAST PAGE MODE
Industrial Temperature
K4F661612D, K4F641612D
LOWER-BYTE READ - MODIFY - WRITE CYCLE
CMOS DRAM
VIH -
RAS
V IL -
V IH -
UCAS
V IL -
V IH -
LCAS
V IL -
VIH -
A
V IL -
V IH -
W
V IL -
V IH -
OE
V IL -
DQ0 ~ DQ7
V I/OH -
V I/OL -
DQ8 ~ DQ15
V I/OH -
VI/OL -
tCRP
tR A S
tR W C
tR P
tRPC
tC R P
tRCD
tR A D
tASR t RAH
ROW
ADDR
tASC
tCAH
COLUMN
ADDRESS
tR S H
t CAS
tCSH
tAWD
tCWD
tR W D
tO E A
tRWL
tC W L
tW P
tCLZ
tC A C
tAA
tRAC
tOED
tO E Z
VALID
DATA-OUT
tD S t D H
VALID
DATA-IN
OPEN
D o n ′t c a r e
Undefined