HD6433694 Datasheet, PDF (341/432 Pages) Renesas Technology Corp – 16-Bit Single-Chip Microcomputer H8 Family/H8/300H Tiny Series

Item
Test
Symbol Condition
Values
Min Typ Max Unit
Erasing
Wait time after SWE
x
bit setting*¹
1
—
—
µs
Wait time after ESU
y
bit setting*¹
100 —
—
µs
Wait time after E bit
z
setting*¹*⁶
Wait time after E bit clear*¹ α
Wait time after ESU bit clear*¹ β
10
—
100 ms
10
—
—
µs
10
—
—
µs
Wait time after EV
γ
bit setting*¹
Wait time after dummy write*¹ ε
Wait time after EV bit clear*¹ η
20
—
—
µs
2
—
—
µs
4
—
—
µs
Wait time after SWE
θ
bit clear*¹
Maximum erase count *¹*⁶*⁷ N
100 —
—
—
—
µs
120 Times
Notes: 1. Make the time settings in accordance with the program/erase algorithms.
2. The programming time for 128 bytes. (Indicates the total time for which the P bit in flash
memory control register 1 (FLMCR1) is set. The program-verify time is not included.)
3. The time required to erase one block. (Indicates the time for which the E bit in flash
memory control register 1 (FLMCR1) is set. The erase-verify time is not included.)
4. Programming time maximum value (t_P (max.)) = wait time after P bit setting (z) ×
maximum programming count (N)
5. Set the maximum programming count (N) according to the actual set values of z1, z2,
and z3, so that it does not exceed the programming time maximum value (t (max.)).
P
The wait time after P bit setting (z1, z2) should be changed as follows according to the
value of the programming count (n).
Programming count (n)
1≤n≤6
z1 = 30 µs
7 ≤ n ≤ 1000 z2 = 200 µs
6.
Erase
time
maximum
value
(t
E
(max.))
=
wait
time
after
E
bit
setting
(z)
×
maximum
erase count (N)
7. Set the maximum erase count (N) according to the actual set value of (z), so that it
does not exceed the erase time maximum value (t_E (max.)).
Rev. 4.00, 03/04, page 313 of 400