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HD6433694 Datasheet, PDF (340/432 Pages) Renesas Technology Corp – 16-Bit Single-Chip Microcomputer H8 Family/H8/300H Tiny Series
21.2.6 Flash Memory Characteristics
Table 21.8 Flash Memory Characteristics
VCC = 3.0 to 5.5 V, VSS = 0.0 V, Ta = –20 to +75°C, unless otherwise indicated.
Item
Test
Symbol Condition
Programming time (per 128 bytes)*1*2*4
Erase time (per block) *1*3*6
Reprogramming count
Programming Wait time after SWE
bit setting*1
tP
tE
NWEC
x
Wait time after PSU
y
bit setting*1
Wait time after P bit setting z1
1≤n≤6
*1*4
z2
7 ≤ n ≤ 1000
z3
Additional-
programming
Wait time after P bit clear*1 α
Wait time after PSU bit clear*1 β
Wait time after PV
γ
bit setting*1
Wait time after dummy write*1 ε
Wait time after PV bit clear*1 η
Wait time after SWE
θ
bit clear*1
Maximum programming
N
count *1*4*5
Min
—
—
1000
1
50
28
198
8
5
5
4
2
2
100
—
Values
Typ Max
7
200
100 1200
10000 —
—
—
—
—
30
32
200 202
10
12
—
—
—
—
—
—
—
—
—
—
—
—
—
1000
Unit
ms
ms
Times
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
Times
Rev. 4.00, 03/04, page 312 of 400