PIC18LF252-ISP Datasheet, PDF (270/332 Pages) Microchip Technology – High-Performance, Enhanced Flash Microcontrollers with 10-Bit A/D

PIC18FXX2
TABLE 22-2: MEMORY PROGRAMMING REQUIREMENTS
DC Characteristics
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +85°C for industrial
-40°C ≤ TA ≤ +125°C for extended
Param
No.
Sym
Characteristic
Min Typ† Max Units
Conditions
D110
D113
VPP
IDDP
Internal Program Memory
Programming Specifications
Voltage on MCLR/VPP pin
Supply Current during
Programming
9.00
—
— 13.25 V
—
10 mA
Data EEPROM Memory
D120 ED Cell Endurance
100K
1M
— E/W -40°C to +85°C
D121 VDRW VDD for Read/Write
VMIN
—
5.5 V Using EECON to read/write
VMIN = Minimum operating
voltage
D122 TDEW Erase/Write Cycle Time
—
4
— ms
D123 TRETD Characteristic Retention
40
—
— Year Provided no other
specifications are violated
D124 TREF Number of Total Erase/Write
Cycles before Refresh⁽¹⁾
1M
10M
— E/W -40°C to +85°C
Program FLASH Memory
D130 EP Cell Endurance
10K 100K
— E/W -40°C to +85°C
D131 VPR VDD for Read
VMIN
—
5.5 V VMIN = Minimum operating
voltage
D132 VIE VDD for Block Erase
4.5
—
5.5 V Using ICSP port
D132A VIW VDD for Externally Timed Erase 4.5
—
5.5 V Using ICSP port
or Write
D132B VPEW VDD for Self-timed Write
VMIN
—
5.5 V VMIN = Minimum operating
voltage
D133 TIE ICSP Block Erase Cycle Time
—
4
—
ms VDD ≥ 4.5V
D133A TIW ICSP Erase or Write Cycle Time 1
—
—
ms VDD ≥ 4.5V
(externally timed)
D133A TIW Self-timed Write Cycle Time
—
2
— ms
D134 TRETD Characteristic Retention
40
—
— Year Provided no other
specifications are violated
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: Refer to Section 6.8 for a more detailed discussion on data EEPROM endurance.
DS39564C-page 268
© 2006 Microchip Technology Inc.