PIC16LF1454 Datasheet, PDF (116/418 Pages) Microchip Technology – 14/20-Pin Flash, 8-Bit USB Microcontrollers with XLP Technology

PIC16(L)F1454/5/9
11.2.3
ERASING FLASH PROGRAM
MEMORY
While executing code, program memory can only be
erased by rows. To erase a row:
1. Load the PMADRH:PMADRL register pair with
any address within the row to be erased.
2. Clear the CFGS bit of the PMCON1 register.
3. Set the FREE and WREN bits of the PMCON1
register.
4. Write 55h, then AAh, to PMCON2 (Flash
programming unlock sequence).
5. Set control bit WR of the PMCON1 register to
begin the erase operation.
See Example 11-2.
After the “BSF PMCON1,WR” instruction, the processor
requires two cycles to set up the erase operation. The
user must place two NOP instructions immediately fol-
lowing the WR bit set instruction. The processor will
halt internal operations for the typical 2 ms erase time.
This is not Sleep mode as the clocks and peripherals
will continue to run. After the erase cycle, the processor
will resume operation with the third instruction after the
PMCON1 write instruction.
FIGURE 11-4:
FLASH PROGRAM
MEMORY ERASE
FLOWCHART
Start
Erase Operation
Disable Interrupts
(GIE = 0)
Select
Program or Configuration Memory
(CFGS)
Select Row Address
(PMADRH:PMADRL)
Select Erase Operation
(FREE = 1)
Enable Write/Erase Operation
(WREN = 1)
Unlock Sequence
(FFIGigUurReE11x-3x)
CPU stalls while
Erase operation completes
(2ms typical)
Disable Write/Erase Operation
(WREN = 0)
Re-enable Interrupts
(GIE = 1)
End
Erase Operation
DS41639A-page 116
Preliminary
 2012 Microchip Technology Inc.