IS75V16F128GS32 Datasheet, PDF (6/52 Pages) Integrated Silicon Solution, Inc – 3.0 Volt Multi-Chip Package (MCP) 128 Mbit Simultaneous Operation Flash Memory and 32 Mbit Pseudo Static RAM

IS75V16F128GS32
ISSI ^®
DC CHARACTERISTICS
Symbol Parameter
Test Conditions
ILI
Input Leakage
VIN=GND to VCCf, VCCr
ILO
ILIT
ICC1f
Output Leakage
RESET Inputs
Leakage Current
FLASH Vcc ⁽¹⁾
Active Current (Read)
VOUT=GND to VCCf, VCCr
VCCf=VCCf max.,
RESET = 12.5V
CEf=VIL, OE=VIH
tCycle = 5Mhz
ICC2f
ICC3f
FLASH Vcc Active⁽²⁾
Current(Program/Erase)
FLASH Vcc Active⁽⁵⁾
Current
(Read-While-Program)
CEf=VIL,
OE=VIH
CEf=VIL,
OE=VIH
tCycle = 1Mhz
ICC4f
ICC5f
IACC
FLASH Vcc Active⁽⁵⁾
Current
CEf=VIL,
OE=VIH
(Read-While-Erase)
FLASH Vcc Active
Current
CEf=VIL,
OE=VIH
(Erase-Suspend-Program)
WP/ACC Acceleration
Program Current
VCCf = Vcc max,
WP/ACC = VACC max
ICC1r PSRAM Vcc Active
Current
ISB1f
FLASH Vcc
Standby Current⁽⁷⁾
VCCr = Vccr max,
trc / twc = min
CE1r=VIL, CE2r=VIH,
VIN=VIH or VIL,
trc / twc = 1 µs
IOUT=0 mA
VCCf = Vccf max, CEf= VCCf + 0.3V,
RESET = VCCf + 0.3V,
WP/ACC = VCCf + 0.3V
ISB2f
FLASH Vcc ⁽⁷⁾
Standby Current
(RESET)
VCCf = Vccf max, RESET= GND + 0.3V,
WP/ACC = VCCf + 0.3V
ISB3f
FLASH Vcc ^(3,7)
Current
(Automatic Sleep Mode)
VCCf = Vccf max, CEf = GND + 0.3V,
RESET = VCCf + 0.3V,
WP/ACC = VCCf + 0.3V,
VIN = VCCf + 0.3V OR GND + 0.3V
ISB1r
PSRAM Vcc Standby⁽⁸⁾
Current
VCCr = Vccr max, CE1r ≥ VCCr -0.2V,
CE2r ≥ VCCr -0.2V,
VIN ≤ 0.2 V or VIN ≥ VCCr -0.2V
IPDSr PSRAM VCC Power
Down Current
(Sleep Mode)
VCCr = VCCr max.,
CE1r ≥ VCCr - 0.2 V
CE2r ≤ 0.2 V, VIN Cycle time = tRC min
IPDNr
PSRAM VCC Power ⁽⁸⁾
Down Current
(Nap Mode)
VCCr = VCCr max.,
CE1r ≥ VCCr - 0.2 V
CE2r ≤ 0.2 V, VIN Cycle time = tRC min
Min. Typ. Max.
-1.0 — +1.0
-1.0 — +1.0
—
— 35
—
— 18
—
—
4
—
— 35
—
— 53
—
— 53
—
— 40
—
— 20
—
— 25
—
—
3
—
1
5
—
1
5
—
1
5
——
110
—
—
10
—
—
65
Unit
µA
µA
µA
mA
mA
mA
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
6
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
PRELIMINARY INFORMATION Rev. 00D
03/24/03