IS75V16F128GS32 Datasheet, PDF (36/52 Pages) Integrated Silicon Solution, Inc – 3.0 Volt Multi-Chip Package (MCP) 128 Mbit Simultaneous Operation Flash Memory and 32 Mbit Pseudo Static RAM

IS75V16F128GS32
ISSI ^®
FLASH ERASE AND PROGRAMMING PERFORMANCE - FLASH 1 or FLASH 2
Parameter
Sector Erase Time
Word Programming Time
Chip Programming Time
Erase/Program Cycle
Min.
Typ.⁽¹⁾
Max.
—
0.5
2.0
—
6.0
100
—
—
200
100,000 —
—
Unit
Remarks
s
Excludes programming time
prior to erasure
µs
Excludes system-level
overhead
s
Excludes system-level
overhead
cycle
Note:
1. Typical Erase conditions TA = 25°C, VCCf_1 & VCCf_2 = 2.9V. Typical
Program conditions TA = 25°C, VCCf_1 & VCCf_2 = 2.9V. Data= Checker
36
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
PRELIMINARY INFORMATION Rev. 00D
03/24/03