IS75V16F128GS32 Datasheet, PDF (24/52 Pages) Integrated Silicon Solution, Inc – 3.0 Volt Multi-Chip Package (MCP) 128 Mbit Simultaneous Operation Flash Memory and 32 Mbit Pseudo Static RAM

IS75V16F128GS32
ISSI ^®
FLASH WRITE/ERASE/PROGRAM OPERATIONS - FLASH 1 or FLASH 2
Parameter
Write Cycle Time
Address Setup Time
Address Setup Time to OE Low
During Toggle Bit Polling
Address Hold Time
Address Hold Time from CEf or
OE High During Toggle Bit Polling
Data Setup Time
Data Hold Time
Output Enable Hold Time Read
Output Enable Hold Time
Toggle and Data Polling
CEf High During Toggle Bit Polling
OE High During Toggle Bit Polling
Read Recover Time Before Write (OE to CEf)
Read Recover Time Before Write (OE to WE)
WE Setup Time (CEf to WE)
CEf Setup Time (WE to CEf)
WE Hold Time (CEf to WE)
CEf Hold Time (WE to CEf)
Write Pulse Width
CEf Pulse Width
Write Pulse Width High
CEf Pulse Width High
Word Programming Operation ⁽¹⁾
Sector Erase Operation ⁽¹⁾
VCC Setup Time
Rise Time to VID ⁽²⁾
Rise Time to VACC ⁽³⁾
Voltage Transition Time ⁽²⁾
Write Pulse Width ⁽²⁾
JEDEC Standard
Symbol Symbol
Min Typ Max
Unit
tAVAV
tWC
70 — —
ns
tAVWL
tAS
0——
ns
—
tASO
12 — —
ns
tWLAX
tAH
45 — —
ns
—
tAHT
0——
ns
tDVWH
tDS
30 — —
ns
tWHDX
tDH
0——
ns
—
tOEH
0——
ns
—
tOEH
10 — —
ns
—
tCEPH
20 — —
ns
—
tOEPH
20 — —
ns
tGHWL
tGHWL
0——
ns
tGHEL
tGHEL
0——
ns
tWLEL
tWS
0——
ns
tELWL
tCS
0——
ns
tEHWH
tWH
0——
ns
tWHEH
tCH
0——
ns
tWHWL
tWP
35 — —
ns
tELEH
tCP
35 — —
ns
tWHWL
tWP
25 — —
ns
tEHEL
tCPH
25 — —
ns
tWHWH1
tWHWH1
— 6 100
µs
tWHWH2
tWHWH2
— 0.5 2.0
s
—
tVCS
50 — —
µs
—
tVIDR
500 — —
ns
—
tVACCR
500 — —
ns
—
tVLHT
4——
µs
—
tWPP
100 — —
µs
24
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
PRELIMINARY INFORMATION Rev. 00D
03/24/03