HN29W25611T Datasheet, PDF (5/42 Pages) Hitachi Semiconductor – 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)

Memory Map and Address
Sector address
3FFFH
3FFEH
3FFDH
2048 bytes
2048 bytes
2048 bytes
HN29W25611T-50H
64 bytes
64 bytes
64 bytes
0002H
0001H
0000H
000H
2048 bytes
2048 bytes
2048 bytes
64 bytes
64 bytes
64 bytes
800H
83FH Column address
2048 + 64 bytes
Control bytes
Address
Cycles
I/O0 I/O1 I/O2 I/O3 I/O4 I/O5 I/O6 I/O7
Sector address SA (1): First cycle A0 A1 A2 A3 A4 A5 A6 A7
SA (2): Second cycle A8 A9 A10 A11 A12 A13 ×*² ×
Column address CA (1): First cycle A0 A1 A2 A3 A4 A5 A6 A7
CA (2): Second cycle A8 A9 A10 A11 × × × ×
Notes: 1. Some failed sectors may exist in the device. The failed sectors can be recognized
by reading the sector valid data written in a part of the column address 800 to 83F
(The specific address is TBD.). The sector valid data must be read and kept outside
of the sector before the sector erase. When the sector is programmed, the sector
valid data should be written back to the sector.
2. An × means "Don't care". The pin level can be set to either V_IL or V_IH, referred
to DC characteristics.
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