HN29W25611T Datasheet, PDF (22/42 Pages) Hitachi Semiconductor – 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)

HN29W25611T-50H
Parameter
Symbol Min Typ Max
CE to output delay
OE to output delay
OE high to output float
RES to WE setup time
CDE setup time for WE
CDE hold time for WE
CDE setup time for SC
CDE hold time for SC
t _CE
—
—
120
t _OE
—
—
60
t _DF
—
—
40
t _RP
1
—
—
t _CDS
0
—
—
t _CDH
20
—
—
t _CDSS
1.5 —
—
t _CDSH
30
—
—
Next cycle ready time
CDE to OE hold time
CDE to output delay
CDE to output invalid
CE setup time for OE
CE hold time for OE
CDE to OE setup time
OE setup time for SC
OE low to output low-Z
t _RDY
t _CDOH
t _CDAC
t _CDF
t _COS
t _COH
t _CDOS
t _OES
t _OEL
0
—
50
—
—
—
—
—
0
—
0
—
20
—
0
—
0
—
—
—
50
100
—
—
—
—
40
SC to output delay
t _SAC
—
—
50
SC to output hold
RDY/Busy setup for SC
CE hold time for WE
CE hold time for WE on
recovery read mode
t _SH
15
—
—
t _RS
200 —
—
t _CWH
1.0 —
—
t _CWHR
2
—
—
WE hold time for WE
t _WWH
1
—
—
Busy time on read mode
t _RBSY
—
45
—
Note: 1. t_DF is a time after which the I/O pins become open.
Unit Test conditions
ns
ns
ns
ms
ns
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
µs
Note
1
22