HN29W25611T Datasheet, PDF (34/42 Pages) Hitachi Semiconductor – 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)

HN29W25611T-50H
Data Recovery Write Timing Waveform
CE
t_CES
t_CEH
OE
t_CWC
t_CWC
t_CWC
t_OEWS
t_WPH
t_WPH
t_WPH
t_OEPS
t_CE
t_OE
WE
CDE
t_{CDS tWP}
t_WP
t_CDS
t_WP
tWP
t_CDS
SC
t_SCS
I/O0 to I/O7
t_CDH
t_DH
t_DS
t_AS
t_CDH
t_AH
t_AS
t_AH
t_DS
t_CDH
t_SCHW
t_DH
t_ASP
t_DF
12H
SA(1)
SA(2)
40H
IO7 = V_OL
RES
t_RP
RDY
/Busy
High-Z
t_DB
*¹
t_COS
t_RDY
t_CDS
t_DF
IO7 = V_OH
*²
High-Z
Notes: 1. Any commands,including reset command FFH, cannot be input while RDY/Busy is V_OL.
2. The status returns to the standby status after RDY/Busy returns to High-Z.
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