HN29W25611T Datasheet, PDF (17/42 Pages) Hitachi Semiconductor – 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)

HN29W25611T-50H
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Notes
V_CC voltage
V_SS voltage
All input and output voltages
V_CC
–0.6 to +7
V
1
V_SS
0
V
Vin, Vout
–0.6 to +7
V
1, 2
Operating temperature range
Topr
0 to +70
˚C
Storage temperature range
Tstg
–65 to +125
˚C
3
Storage temperature under bias
Tbias
–10 to +80
˚C
Notes: 1. Relative to V_SS.
2. Vin, Vout = –2.0 V for pulse width ≤ 20 ns.
3. Device storage temperature range before programming.
Capacitance (Ta = 25˚C, f = 1 MHz)
Parameter
Input capacitance
Output capacitance
Symbol
Cin
Cout
Min Typ Max Unit Test conditions
— — 6 pF Vin = 0 V
— — 12 pF Vout = 0 V
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