HN29W25611T Datasheet, PDF (21/42 Pages) Hitachi Semiconductor – 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)

HN29W25611T-50H
Program, Erase and Erase Verify
Parameter
Symbol Min Typ Max Unit Test conditions
Write cycle time
t _CWC
120 —
—
ns
Serial clock cycle time
t _SCC
50
—
—
ns
CE setup time
t _CES
0
—
—
ns
CE hold time
t _CEH
0
—
—
ns
Write pulse time
t _WP
60
—
—
ns
Write pulse high time
t _WPH
40
—
—
ns
Address setup time
t _AS
50
—
—
ns
Address hold time
t _AH
10
—
—
ns
Data setup time
t _DS
50
—
—
ns
Data hold time
t _DH
10
—
—
ns
OE setup time before command t_OEWS
0
write
—
—
ns
OE setup time before status
t _OEPS
40
—
—
ns
polling
OE setup time before read
t _OER
Time to device busy
t _DB
Time to device busy on read t_DBR
mode
250 —
—
—
—
—
—
ns
150 ns
1
µs
Auto erase time
Auto program time
Program(1), (3)
t _ASE
—
1.5 10.0 ms
t _ASP
—
3.0 20.0 ms
Program(2)
Program(4),
Data recovery write
t _ASP
—
2.5 20.0 ms
t _ASP
—
3.5 30.0 ms
WE to SC delay time
WE to SC delay time on
recovery read mode
t _WSD
50
—
—
µs
t _WSDR
2
—
—
µs
CE pulse high time
SC pulse width
SC pulse low time
Data setup time for SC
Data hold time for SC
SC setup for WE
SC setup for CE
SC hold time for WE
t _CPH
200 —
—
ns
t _SP
20
—
—
ns
t _SPL
20
—
—
ns
t _SDS
0
—
—
ns
t _SDH
30
—
—
ns CDE = V_IL
t _SW
50
—
—
ns
t _SCS
0
—
—
ns
t _SCHW
20
—
—
ns
Note
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