HN29W25611T Datasheet, PDF (11/42 Pages) Hitachi Semiconductor – 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)

HN29W25611T-50H
Program (4): Program data PD0 to PD2111 is programmed into the sector of address SA automatically by
internal control circuits. When CA is input, program data PD (m) to PD (m + j) is programmed from CA into
the sector of address SA automatically by internal control circuits. By using program (4), data can be
rewritten for each sector before the following erase. So the column data before programming operation are
either "1" or "0". In this mode, E/W number of times must be counted whenever program (4) execute. After
the programming starts, the program completion can be checked through the RDY/Busy signal and status data
polling. The sector valid data should be included in the program data PD2048 to PD2111.
16383
Sector
address
16383
Sector
address
16383
Sector
address
Memory array
0
Memory array
0
Memory array
0
0
2111
Register
Serial read (1) (Without CA)
Program (1) (Without CA)
Program (2)
0 _{Column address 2111}
Register
Serial read (1) (With CA)
Program (1) (With CA)
0
2048 2111
Register
Serial read (2)
Program (3)
Status Register Read
The status returns to the status register read mode from standby mode, when CE and OE is V_IL. In the status
register read mode, I/O pins output the same operation status as in the status data polling defined in the
function description.
Identifier Read
The manufacturer and device identifier code can be read in the identifier read mode. The manufacturer and
device identifier code is selected with CDE V_IL and V_IH, respectively.
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