HN29W25611T Datasheet, PDF (12/42 Pages) Hitachi Semiconductor – 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)

HN29W25611T-50H
Data Recovery Read
When the programming was an error, the program data can be read by using data recovery read. When an
additional programming was an error, the data compounded of the program data and the origin data in the
sector address SA can be read. Output data are not valid after the number of SA pulse exeeds 2112. The
mode turns back to the standby mode at any time when CE is V_IH. The read data are invalid when addresses
are latched at a rising edge of WE pulse after the data recovery read command is written.
Data Recovery Write
When the programming into a sector of address SA was an error, the program data can be rewritten
automatically by internal control circuit into the other selected sector of address SA’. In this case, top address
[SA13] of sector of address SA’ must be the same as SA. Since the data recovery write mode is internally
Program (4) mode, rewritten sector of address SA’ needs no sector erase before rewrite. After the data
recovery write mode starts, the program completion can be checked through the RDY/Busy signal and the
status data polling.
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