HN29W25611T Datasheet, PDF (19/42 Pages) Hitachi Semiconductor – 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)

HN29W25611T-50H
Power on and off, Serial Read Mode
Parameter
Symbol Min Typ Max Unit Test conditions
Notes
Write cycle time
Serial clock cycle time
CE setup time
CE hold time
Write pulse time
Write pulse high time
Address setup time
Address hold time
Data setup time
Data hold time
SC to output delay
OE setup time for SC
OE low to output low-Z
OE setup time before read
OE setup time before
command write
t _CWC
t _SCC
t _CES
t _CEH
t _WP
t _WPH
t _AS
t _AH
t _DS
t _DH
t _SAC
t _OES
t _OEL
t _OER
t _OEWS
120 —
—
ns
50
—
—
ns
0
—
—
ns
0
—
—
ns
60
—
—
ns
CE = V_IL, OE = V_IH
40
—
—
ns
50
—
—
ns
10
—
—
ns
50
—
—
ns
10
—
—
ns
—
—
50
ns
CE = OE = V_IL, WE = V_IH
0
—
—
ns
0
—
40
ns
250 —
—
ns
0
—
—
ns
SC to output hold
OE high to output float
WE to SC delay time
RES to CE setup time
SC to OE hold time
SC pulse width
SC pulse low time
SC setup time for CE
CDE setup time for WE
CDE hold time for WE
V_CC setup time for RES
RES to V_CC hold time
CE setup time for RES
RDY/Busy undefined for V_CC
off
t _SH
t _DF
t _WSD
t _RP
t _SOH
t _SP
t _SPL
t _SCS
t _CDS
t _CDH
t _VRS
t _VRH
t _CESR
t _DFP
15
—
—
ns
CE = OE = V_IL, WE = V_IH
—
—
40
ns
CE = V_IL, WE = V_IH
1
50
—
—
µs
2
1
—
—
ms
50
—
—
ns
20
—
—
ns
20
—
—
ns
0
—
—
ns
0
—
—
ns
20
—
—
ns
1
—
—
µs
CE = V_IH
1
—
—
µs
CE = V_IH
1
—
—
µs
0
—
—
ns
RES high to device ready
CE pulse high time
CE, WE setup time for RES
RES to CE, WE hold time
t _BSY
t _CPH
t _CWRS
t _CWRH
—
—
1
ms
200 —
—
ns
0
—
—
ns
0
—
—
ns
19