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| HN29W25611T Datasheet, PDF (30/42 Pages) Hitachi Semiconductor – 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) | |||
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HN29W25611T-50H
Program (4) and Status Data Polling Timing Waveform
CE
OE
WE
CDE
SC
I/O0 to I/O7
tCES
tOEWS tCWC tCWC
tWPH tWPH
tCDS tWPtCDS tWP
tWP
tCDSS
tSCS
tCDH
tDS
tDH
tAS
tAH
tAS
tCDH
tWSD
tAH
tSCC
tSPL
tSDH
tSDS
tSP
tCEH
tCE
tCOS
tOEPS
tOE
tSW tWP
tASP
*1
tCDH
tSCHW
tSP tDS
tDH
tDF
11H SA (1) SA (2) PD0 PD1 PD2111 40H
RES
tRP
RDY
/Busy
tDBR
tDB
tRS
High-Z
tRBSY
I/O7 = VOL
*2
Notes: 1. The programming operation is not guranteed when the number of the SC pulse exceeds 2112.
2. Any commands, including reset command FFH, cannot be input while RDY/Busy is VOL.
3. The status returns to the standby status after RDY/Busy returns to High-Z.
4. By using program (4), data can be rewritten for each sector.
tRDY
tCDS
I/O7 = VOH
*3
High-Z
30
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