HN29W25611T Datasheet, PDF (26/42 Pages) Hitachi Semiconductor – 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)

HN29W25611T-50H
Program (1) and Status Data Polling Timing Waveform
CE
OE
WE
CDE
SC
I/O0 to I/O7
RES
RDY
/Busy
t_CES
t_OEWS t_CWC t_CWC
t_WPH t_WPH
t_CEH
t_CE
t_COS
t_OEPS
t_OE
t_CDS t_WPt_CDS t_WP
t_WP
t_CDSS
t_SW t_WP
t_ASP
t_CDH
t_CDH
t_SCC
t_SPL
*¹
t_CDH
t_SCHW
t_SCS
t_DS
t_DH
t_AS
t_AH
t_AS
t_AH
t_SDH
t_SDS
t_SP
t_SP ^tDS
t_DH
t_DF
10H SA (1) SA (2) PD0 PD1 PD2111 40H
t_DB
t_RP
High-Z
I/O7 = V_OL
*²
t_RDY
t_CDS
t_DF
I/O7 = V_OH
*³
High-Z
Notes: 1. The programming operation is not guranteed when the number of the SC pulse exceeds 2112.
2. Any commands, including reset command FFH, cannot be input while RDY/Busy is V_OL.
3. The status returns to the standby status after RDY/Busy returns to High-Z.
4. By using program (1), data can be programmed additionally for each sector before erase.
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