HN29W25611T Datasheet, PDF (18/42 Pages) Hitachi Semiconductor – 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)

HN29W25611T-50H
DC Characteristics (V_CC = 3.3 V ± 0.3 V, Ta = 0 to +70˚C)
Parameter
Symbol Min
Typ Max
Unit Test conditions
Input leakage current
I _LI
—
—2
µA Vin = V_SS to V_CC
Output leakage current
I _LO
—
—2
µA Vout = V_SS to V_CC
Standby V_CC current
I _SB1
—
0.3 1
mA CE = V_IH
I _SB2
—
30 50
µA CE = V_CC ± 0.2 V,
RES = V_CC ± 0.2 V
Deep standby V_CC current
I _SB3
—
1
5
µA RES = V_SS ± 0.2 V
Operating V_CC current
I _CC1
—
20 25
mA Iout = 0 mA, f = 0.2 MHz
I _CC2
—
30 50
mA Iout = 0 mA, f = 20 MHz
Operating V_CC current (Program) I_CC3
—
20 40
mA In programming
Operating V_CC current (Erase) I_CC4
—
20 40
mA In erase
Input voltage
V_IL
–0.3*^{1, 2} —
0.8
V
V_IH
2.0
—
V_CC + 0.3*³ V
Input voltage (RES pin)
V_ILR
–0.2
— 0.2
V
V_IHR
V_CC – 0.2 —
V_CC + 0.2 V
Output voltage
V_OL
—
— 0.4
V
I_OL = 2 mA
V_OH
2.4
——
V
I_OH = –2 mA
Notes: 1. V_IL min = –1.0 V for pulse width ≤ 50 ns in the read operation. V_IL min = –2.0 V for pulse width ≤ 20
ns in the read operation.
2. V_IL min = –0.6 V for pulse width ≤ 20 ns in the erase/data programming operation.
3. V_IH max = V_CC + 1.5 V for pulse width ≤ 20 ns. If V_IH is over the specified maximum value, the
operations are not guaranteed.
AC Characteristics (V_CC = 3.3 V ± 0.3 V, Ta = 0 to +70˚C)
Test Conditions
• Input pulse levels: 0.4 V/2.4 V
• Input pulse levels for RES: 0.2 V/V_CC – 0.2 V
• Input rise and fall time: ≤ 5 ns
• Output load: 1 TTL gate + 100 pF (Including scope and jig.)
• Reference levels for measuring timing: 0.8 V, 1.8 V
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