HN29W25611T Datasheet, PDF (16/42 Pages) Hitachi Semiconductor – 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)

HN29W25611T-50H
Status Transition
Deep
standby
V_CC
RES
Power off
00H/F0H
FFH
CE
Read (1) / (2) ^{SA (1), SA (2)}
setup
Column address
CA(1)
CA(2)
input
CA(1)'
CA(2)'
OE
SC
Sector address ^{OE, SC}
input
Read (1) / (2)
CE
Standby
90H
FFH
CE
ID read setup ^{CDE, OE} ID read
20H
FFH
Sector
Erase setup
SA (1), SA (2)
Sector
B0H
address input
BUSY
Erase ^{OE Status register}
start
read
Erase finish
Column address ^{SC, CDE}
input
PD(m)
CA(1)
CA(2)
CA(1)' ^to
CA(2)' ^PD(m+j)
10H
Output /11H
Program
PD0 to
SA (1),
SA (2)
PD2111
Sector address
Program
40H _Program
OE
disable
(1)/(4) setup
input
data input
start
FFH
SC, CDE
Status register
read
Program finish
1FH
SA (1),
/0FH _{Program (2)/(3)} SA (2)
setup
FFH
PD0 to
PD2111*3
Sector address
Program
40H
Program
input _{SC, CDE} data input
start
Program finish
Status register clear 50H
OE _{Status register}
read
Program error or
Erase error
CE*²
FFH*²
OE _{Status register}
read
Error ^CE
standby
*4
ERROR
01H*¹ _{Data recovery} OE, SC _{Data recovery}
read setup
read
Output
12H*¹
Program retry
SA(1)
SA(2)
Sector address ^40H
disable
FFH
setup
input
OE
Status register
read
Notes: 1. (01H)/(12H) Data recovery read/write can be used only for Program (1), (2), (3), (4) errors.
2. When reset is done by CE or FFH, error status flag is cleared.
3. When Program (3) mode, input data is PD2048 to PD2111.
4. When Error standby, I_CC3 level is current.
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