HN29W25611T Datasheet, PDF (33/42 Pages) Hitachi Semiconductor – 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)

Data Recovery Read Timing Waveform
HN29W25611T-50H
CE
OE
WE
CDE
SC
t_CES
t_CWHR
*¹
t_CPH
t_COH
t_OEWS
t_OER
t_{CDS tWP} ^tCDH
t_CDOS
t_OES
t_WSDR
t_SCC
t_{SCC *2}
t_SOH
t_SP
t_SPL
t_{SCS tDS}
t_DH
t_OEL ^tSAC t_SH ^tSAC t_SH ^tSAC
t_SAC
t_DF
*³
t_CEH
t_WP
t_CDH
t_CDS
t_DH
t_DS
I/O0 to I/O7
01H
D0out D1out
D2111out
*²
FFH
High
RES
RDY
/Busy
High-Z
Notes: 1. The status returns to the standby at the rising edge of CE.
2. Output data is not valid after the number of the SC pulse exceed 2112 in the recovery data read mode.
3. After any commands are written, the status can turns to the standby after the command FFH is input
and CE turns to the V_IH level.
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