HN29W25611T Datasheet, PDF (1/42 Pages) Hitachi Semiconductor – 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)

HN29W25611T-50H
256M AND type Flash Memory
More than 16,057-sector (271,299,072-bit)
ADE-203-1178A (Z)
Rev. 1.0
May. 10, 2000
Description
The Hitachi HN29W25611T is a CMOS Flash Memory with AND type multi-level memory cells. It has fully
automatic programming and erase capabilities with a single 3.3 V power supply. The functions are controlled
by simple external commands. To fit the I/O card applications, the unit of programming and erase is as small
as (2048 + 64) bytes. Initial available sectors of HN29W25611T are more than 16,057 (98% of all sector
address) and less than 16,384 sectors.
Features
• On-board single power supply (V_CC): V_CC = 3.3 V ± 0.3 V
• Organization
 AND Flash Memory: (2048 + 64) bytes × (More than 16,057 sectors)
 Data register: (2048 + 64) bytes
• Multi-level memory cell
 2 bit/per memory cell
• Automatic programming
 Sector program time: 3.0 ms (typ)
 System bus free
 Address, data latch function
 Internal automatic program verify function
 Status data polling function
• Automatic erase
 Single sector erase time: 1.5 ms (typ)
 System bus free
 Internal automatic erase verify function
 Status data polling function