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| HN29W25611T Datasheet, PDF (23/42 Pages) Hitachi Semiconductor – 256M AND type Flash Memory More than 16,057-sector (271,299,072-bit) | |||
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! TimingWaveforms
Power on and off Sequence
HN29W25611T-50H
VCC
tVRS
CE
WE
RES
*1
RDY
/Busy
tRP tCES
tCWRS
tBSY
tCEH tCESR
tRP tCES
*2
High-Z
Ready
tBSY
tCEH tCESR
tCWRH
tVRH
tDFP
*1
Notes: 1. RES must be kept at the VILR level referred to DC characteristics at the rising and falling edges of VCC
to guarantee data stored in the chip.
2. RES must be kept at the VIHR level referred to DC characteristics while I/O7 outputs the VOL level in the
status data polling and RDY/Busy outputs the VOL level.
3.
: Undefined
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