MC9S12DP256B Datasheet, PDF (92/126 Pages) Freescale Semiconductor, Inc – device made up of standard HCS12 blocks and the HCS12 processor core

MC9S12DP256B Device User G^Fui^rd^ee^e—^scV0^a2.^l1^e5 ^{Semiconductor, Inc.}
Table A-6 5V I/O Characteristics
Conditions are shown in Table A-4 unless otherwise noted
Num C
Rating
Symbol Min
Typ
Max Unit
1 P Input High Voltage
V_IH
0.65*V_DD5
-
-
V
T Input High Voltage
V_IH
-
-
VDD5 + 0.3 V
2 P Input Low Voltage
V_IL
-
-
0.35*V_DD5
V
T Input Low Voltage
V_IL
VSS5 - 0.3
-
-
V
3 C Input Hysteresis
V_HYS
250
mV
Input Leakage Current (pins in high impedance input
4 P mode)¹
V_in = V_DD5 or V_SS5
I
in
–2.5
-
2.5
µA
Output High Voltage (pins in output mode)
5 P ^{Partial Drive IOH = –2mA}
Full Drive IOH = –10mA
V_OH
V_DD5 – 0.8
-
-
V
Output Low Voltage (pins in output mode)
6 P ^{Partial Drive IOL = +2mA}
Full Drive IOL = +10mA
V_OL
-
-
0.8
V
Internal Pull Up Device Current,
7 P _{tested at VIL Max.}
I_PUL
-
-
-130
µA
Internal Pull Up Device Current,
8 P _{tested at V Min.}
IH
I_PUH
-10
-
-
µA
Internal Pull Down Device Current,
9 P _{tested at VIH Min.}
I_PDH
-
-
130
µA
Internal Pull Down Device Current,
10 P _{tested at VIL Max.}
I_PDL
10
-
-
µA
11 D Input Capacitance
C_in
6
-
pF
Injection current²
12 T _{Single Pin limit}
Total Device Limit. Sum of all injected currents
I_ICS
-2.5
-
2.5
mA
I_ICP
-25
25
13 P _{Port H, J, P Interrupt Input Pulse filtered}³
t_PULSE
3
µs
14 P _{Port H, J, P Interrupt Input Pulse passed}³
t_PULSE
10
µs
NOTES:
1. Maximum leakage current occurs at maximum operating temperature. Current decreases by approximately one-half for
each 8 C to 12 C in the temperature range from 50 C to 125 C.
2. Refer to Section A.1.4 Current Injection, for more details
3. Parameter only applies in STOP or Pseudo STOP mode.
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