MC9S08SH32CWL Datasheet, PDF (312/328 Pages) Freescale Semiconductor, Inc – MC9S08SH32 Series Features

Appendix A Electrical Characteristics
A.13 Flash Specifications
This section provides details about program/erase times and program-erase endurance for the Flash
memory.
Program and erase operations do not require any special power sources other than the normal V_DD supply.
For more detailed information about program/erase operations, see the Memory section.
Table A-16. Flash Characteristics
Num C
Characteristic
Symbol
Min
Typical
Max
Unit
1
— Supply voltage for program/erase
V_prog/erase
2.7
5.5
V
2
— Supply voltage for read operation
3
— Internal FCLK frequency¹
V_Read
2.7
f_FCLK
150
5.5
V
200
kHz
4
— Internal FCLK period (1/f_FCLK)
t_Fcyc
5
— Byte program time (random location)²
t_prog
6
— Byte program time (burst mode)²
t_Burst
7
— Page erase time²
t_Page
8
— Mass erase time²
t_Mass
Program/erase endurance³
9
C
T_L to T_H = –40°C to +125°C
T = 25°C
n_FLPE
5
10,000
9
4
4000
20,000
—
100,000
6.67
—
—
μs
t_Fcyc
t_Fcyc
t_Fcyc
t_Fcyc
cycles
10
C Data retention⁴
t_{D_ret}
15
100
—
years
1 _{The frequency of this clock is controlled by a software setting.}
2 _{These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for}
calculating approximate time to program and erase.
3 _{Typical endurance for Flash is based upon the intrinsic bit cell performance. For additional information on how Freescale}
defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.
4 _{Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated}
to 25°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer
to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
MC9S08SH32 Series Data Sheet, Rev. 2
312
Freescale Semiconductor
PRELIMINARY