TH58NS100DC Datasheet, PDF(32/43 Page) Toshiba Semiconductor – TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 - GBIT (128M X 8 BITS) CMOS NAND E2PROM ( 128M BYTE SmartMediaTM )

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TH58NS100DC Datasheet, PDF (32/43 Pages) Toshiba Semiconductor – TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 - GBIT (128M X 8 BITS) CMOS NAND E2PROM ( 128M BYTE SmartMediaTM )

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TH58NS100DC

ID Read (1)

The device contains ID codes which identify the device type and the manufacturer.

The device has 2 types of ID read command, i.e. ID Read (1) command 90H and ID Read (2) command 91H.

ID Read (1) command 90H provides maker code and device code. The ID codes can be read out under the

following timing conditions:

CLE

tCR

ALE

tAR1

I/O

90H

tREAID

98H

79H

A5H

C0H

ID Read command (1) Address

Maker code Device code Option code (1)

For the specifications of the access times tREAID, tCR and tAR1 refer to the AC Characteristics.

Option code (2)

Figure 13. ID Read timing

Table 6. ID Codes read out by ID read command (1) 90H

I/O8

I/O7

I/O6

I/O5

I/O4

I/O3

I/O2

I/O1

Maker code

Device code

Option code (1)

Option code (2)

* The A5H for the 3rd byte of ID read means the existence of 128 bit unique ID number in the device.

** The C0H for the 4th byte of ID read means the existence of ID Read (2) function.

Hex Data

98H

79H

A5H*

C0H**

How to read out unique ID number

The 128 bit unique ID number is embedded in the device. The procedure to read out the ID number is available

using special command which is provided under a non-disclosure agreement.

2001-03-21 32/43

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