TH58NS100DC Datasheet, PDF (27/43 Pages) Toshiba Semiconductor – TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 - GBIT (128M X 8 BITS) CMOS NAND E2PROM ( 128M BYTE SmartMediaTM )

TH58NS100DC
Multi Block Program
The device carries out an Multi Block Program operation when it receives a “15H” or “10H” Program
command after some sets of the address and data have been input.
In the interval of the Multi District adress and the (512 + 16 byte) data input, “11H” Dummy Program
command is used when it still continues the data input into another District.
The sequence of command, address and data input is shown below. (Refer to the detailed timing chart.)
Data input
command
80
Dummy
Program
command
11
Data input
command
80
Dummy
Program
command
11
Data input
command
80
Dummy
Program
command
11
Data input
command
80
Multi block
Program
command
15
Address Data input
input 0 to 527
Address Data input
input 0 to 527
Address Data input
input 0 to 527
Address Data input
input 0 to 527
RY/BY
80
Data input
11
80
11
80
11
80
15
(District 0)
(District 1)
(District 2)
(District 3)
After “15H” Multi Block Program command, physical programing starts as follows.
Program
Selected
page
Reading & verification
The data is transferred (programmed) from the register to the selected page on the rising edge of -WE
following input of the “15H” command. After programming, the programmed data is transferred back to
the register to be automatically verified by the device. If the programming does not succeed, the
Program/Verify operation is repeated by the device until success is achieved or until the maximum loop
number set in the device is reached.
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