TH58NS100DC Datasheet, PDF (3/43 Pages) Toshiba Semiconductor – TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 - GBIT (128M X 8 BITS) CMOS NAND E2PROM ( 128M BYTE SmartMediaTM )

VALID BLOCKS (1)
TH58NS100DC
SYMBOL
PARAMETER
MIN
TYP.
MAX
UNIT
N_VB
Number of Valid Blocks
8032
¾
8192
Blocks
(1) The TH58NS100 occasionally contains unusable blocks. Refer to Application Note (14) toward the end of this document.
RECOMMENDED DC OPERATING CONDITIONS
SYMBOL
PARAMETER
V_CC
Power Supply Voltage
V_IH
High Level input Voltage
V_IL
Low Level Input Voltage
* -2 V (pulse width lower than 20 ns)
MIN
3.0
2.0
-0.3*
TYP.
3.3
¾
¾
MAX
3.6
V_CC + 0.3
0.8
UNIT
V
V
V
DC CHARACTERISTICS (Ta = 0° to 55°C, V_CC = 3.3 V ± 0.3 V)
SYMBOL
PARAMETER
CONDITION
MIN
I_IL
I_LO
I_CCO1
I_CCO3
Input Leakage Current
V_IN = 0 V to V_CC
¾
Output Leakage Current
V_OUT = 0.4 V to V_CC
¾
Operating Current (Serial Read) CE = V_IL, I_OUT = 0 mA, t_cycle = 50 ns
¾
Operating Current
(Command Input)
t_cycle = 50 ns
¾
I_CCO4
Operating Current (Data Input) t_cycle = 50 ns
¾
I_CCO5
Operating Current
(Address Input)
t_cycle = 50 ns
¾
I_CCO7
Programming Current
¾
¾
I_CCO8
Erasing Current
¾
¾
I_CCS1
Standby Current
CE = V_IH
¾
I_CCS2
Standby Current
CE = V_CC - 0.2 V
¾
V_OH
High Level Output Voltage
I_OH = -400 mA
2.4
V_OL
Low Level Output Voltage
I_OL = 2.1 mA
¾
I_OL ( RY/BY ) Output Current of RY/BY pin V_OL = 0.4 V
¾
TYP.
¾
¾
10
10
10
10
10
10
¾
¾
¾
¾
8
MAX
±10
±10
30
30
30
30
30
30
1
100
¾
0.4
¾
UNIT
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
mA
2001-03-21 3/43