TCA5013 Datasheet, PDF (9/68 Pages) Texas Instruments – Feature Rich Smartcard Interface IC

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TCA5013
SCPS253B – JANUARY 2014 – REVISED JANUARY 2016
Electrical Characteristics—Card Interface IO, C4 and C8 (continued)
V_DD = V_DDI = 3.3 V; L_VDD = 10 µH; C_VDD = 10 µF; C_VUP = 10 µF; T_A = –40°C to 85°C unless otherwise noted
PARAMETER
TEST CONDITIONS
MIN TYP
V_CC= 3 V;
IO fall time register setting = 01b
V_{OL - IO, 3 V}
Output Low Voltage
V_CC= 3 V;
IO fall time register setting = 10b
I_OL= -1 mA
V_CC= 3 V;
IO fall time register setting = 11b
V_CC= 3 V;
IO fall time register setting = 00b
V_{OL - IO, 3 V, 500uA} Output Low Voltage
V_CC= 3 V;
IO fall time register setting = 01b
V_CC= 3 V;
IO fall time register setting = 10b
I_OL= -500
µA
V_CC= 3 V;
IO fall time register setting = 11b
V_{OL - IO, 1.8 V}
Output Low Voltage
V_CC= 1.8 V;
IO fall time register setting = 11b
I_OL= -1 mA
V_CC= 1.8 V;
IO fall time register setting = 01b
V_{OL - IO, 1.8 V, 500uA} Output Low Voltage
V_CC= 1.8 V;
IO fall time register setting = 10b
I_OL= -500
µA
V_CC= 1.8 V;
IO fall time register setting = 11b
t_{PD - R - IOMC - IO}
Rising edge
propagation delay
From IOMC pin to card IO; C_L on card IO = 30 pF;
C_L on IOMC = 30 pF; Prop delay measured from
70% V_DDI to 70% of V_CC for rising edge
t_{PD - F - IOMC - IO}
Falling edge
propagation delay
From IOMC pin to card IO; C_L on card IO = 30 pF;
C_L on IOMC = 30 pF; Prop delay measured from
30% V_DDI to 30% of V_CC for falling edge;
t_{FO - IO}
IO Line output fall time
C_L = 30 pF ; 10% to 90%; IO fall time register setting
= 00b
68
t_{RO - IO}
IO Line output rise time
C_L = 30 pF ; 10% to 90%; IO rise time register
setting = 100b
100
t_{RO - C4, C8}
C4, C8 Line output rise
time
C_L = 30 pF ; 10% to 90%
t_{FO - C4, C8}
C4, C8 Line output fall
time
C_L = 30 pF ; 90% to 10%
t_{RI - IO, C4, C8}
IO, C4, C8 Input rise
time
10% to 90%
t_{FI - IO, C4, C8}
IO, C4, C8 Input fall
time
90% to 10%
C_{I - IO, C4, C8}
R_{PU - IO, C4, C8}
Input capacitance
Pull-up resistance
F = 1 MHz
IO, C4, C8 pull-up to V_CC
4.25
MAX UNIT
0.3
0.3 V
0.3
0.3
0.3
V
0.3
0.3
0.18 V
0.18
0.18 V
0.18
400 ns
250 ns
ns
ns
1.2 µs
1.2 µs
1.2 µs
1.2 µs
10 pF
8.1 kΩ
6.10 Electrical Characteristics—PRES
V_DD = V_DDI = 3.3 V; L_VDD = 10 µH; C_VDD = 10 µF; C_VUP = 10 µF; T_A = –40°C to 85°C unless otherwise noted
PARAMETER
TEST CONDITION
MIN
TYP
MAX
V_{IL - PRES}
V_{IH - PRES}
I_{LEAK - PRES}
t_DEB(P)
t_DEB(D)
Input Low voltage
Input high voltage
Input leakage current
Debounce time
Voltage on pin = V_DDI
Time from transition on PRES pin to PRESL bit being
set
Time from transition on PRES pin to start of
deactivation sequence (RST going low)
0.7 V_DDI
0.3 V_DDI
1
20
100
UNIT
V
V
µA
ms
µs
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