TCA5013 Datasheet, PDF (10/68 Pages) Texas Instruments – Feature Rich Smartcard Interface IC

TCA5013
SCPS253B – JANUARY 2014 – REVISED JANUARY 2016
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6.11 Electrical Characteristics—IOMC1 and IOMC2
V_DD = V_DDI = 3.3 V; L_VDD = 10 µH; C_VDD = 10 µF; C_VUP = 10 µF; T_A = –40°C to 85°C unless otherwise noted
PARAMETER
TEST CONDITION
MIN TYP
MAX
V_{OL- IOMC}
V_{OH - IOMC}
V_{IL - IOMC}
V_{IH - IOMC}
t_{PD - F - IO - IOMC}
Output low voltage
Output high voltage
Input low signal
Input high signal
Falling edge propagation
delay
I_OL = -100 µA
I_OH = 20 µA
From Card IO pin to IOMC; C_L on card IO = 30 pF;
Prop delay measured from 30% V_CC to 30% of V_DDI for
falling edge;
0.8 V_DDI
0.7 V_DDI
0.2 V_DDI
0.3 V_DDI
250
t_{PD - F - IO - IOMC}
Rising edge propagation
delay
From Card IO pin to IOMC; C_L on card IO = 30 pF;
Prop delay measured from 70% V_CC to 70% of V_DDI for
rising edge;
400
t_{RO - IOMC}
t_{FO - IOMC}
t_{RI - IOMC}
t_{FI - IOMC}
C_{I - IOMC}
R_{PU - IOMC}
Output rise time
Output fall time
Input rise time
Input fall time
Input capacitance
Pull-up resistance
C_L = 30 pF ; 10% to 90%
C_L = 30 pF ; 90% to 10%
10% to 90%
90% to 10%
Pull-up to V_DDI
1.2
1.2
1.2
1.2
10
11
UNIT
V
V
V
V
ns
ns
µs
µs
µs
µs
pF
kΩ
6.12 Electrical Characteristics—CLKIN1 and CLKIN2
V_DD = V_DDI = 3.3 V; L_VDD = 10 µH; C_VDD = 10 µF; C_VUP = 10 µF; T_A = –40°C to 85°C unless otherwise noted
PARAMETER
TEST CONDITION
MIN
TYP
MAX
V_{IL - CLKIN}
V_{IH - CLKIN}
t_{R - CLKIN}
t_{F - CLKIN}
f_CLKIN
Input Low voltage
Input high voltage
Rise time
Fall time
Input clock frequency
10% to 90%
90% to 10%
0.8 V_DDI
0.2 V_DDI
0.1
0.1
26
UNIT
V
V
µs
µs
MHz
6.13 Electrical Characteristics—A0 and SHDN
V_DD = V_DDI = 3.3 V; L_VDD = 10 µH; C_VDD = 10 µF; C_VUP = 10 µF; T_A = –40°C to 85°C unless otherwise noted
PARAMETER
TEST CONDITION
MIN
TYP
MAX
V_{IL - A0, SHDN}
V_{IH - A0, SHDN}
I_{LEAK - A0, SHDN}
C_{I - A0, SHDN}
R_{PU - SHDN}
input Low voltage
input high voltage
Input leakage current
Input Capacitance
Pull-up resistance on SHDN
Voltage on pin = V_DDI
Pull-up to V_DDI
0.8 V_DDI
0.2 V_DDI
1
10
2.5
UNIT
V
V
µA
pF
MΩ
6.14 Electrical Characteristics—INT
V_DD = V_DDI = 3.3 V; L_VDD = 10 µH; C_VDD = 10 µF; C_VUP = 10 µF; T_A = –40°C to 85°C unless otherwise noted
PARAMETER
TEST CONDITION
MIN
TYP
MAX
I_{LEAK - INT}
V_{OL - INT}
Input leakage current
Output low voltage
Voltage on pin = V_DDI
I_OL = -3 mA
1
0.2 V_DDI
UNIT
µA
V
6.15 Electrical Characteristics—GPIO
V_DD = V_DDI = 3.3 V; L_VDD = 10 µH; C_VDD = 10 µF; C_VUP = 10 µF; T_A = –40°C to 85°C unless otherwise noted
PARAMETER
TEST CONDITION
MIN TYP
MAX
V_{OL - GPIO}
I_{OL - GPIO}
I_{LEAK - GPIO}
T_{PD - GPIO}
Output low voltage
Output low current
Input leakage current
State transition on GPIO to INT assertion
I_OL = -10 mA
Voltage on pin = V_DDI
R_PU on INT= 10 k; C_L on INT 20 pF;
GPIO and INT transition referenced to 0.5 V_DDI
0.2 V_DDI
10
1
4
UNIT
V
mA
µA
µs
10
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