TCA5013 Datasheet, PDF (7/68 Pages) Texas Instruments – Feature Rich Smartcard Interface IC

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TCA5013
SCPS253B – JANUARY 2014 – REVISED JANUARY 2016
6.5 Electrical Characteristics—Power Supply and ESD
V_DD = V_DDI = 3.3 V; L_VDD = 10 µH; C_VDD = 10 µF; C_VUP = 10 µF; T_A = –40°C to 85°C unless otherwise noted
PARAMETER
TEST CONDITIONS
MIN
TYP
V_DDTH
V_DDSH
V_DDITH
I_DDSH
I_DDST
I_DDA
I_DDA1 ⁽¹⁾
I_DDISH
I_DDIA
t_WAKE
f_OSC
f_DC-DC
V_DC-DC
V_ESD-IEC
VDD supervisor fault threshold
VDD shutdown threshold
VDDI shutdown threshold
VDD Shutdown current
VDD Standby current
Supply current
VDD Interface shutdown current
VDD Interface supply current
Device wakeup time
Internal Oscillator Frequency
DC-DC switching frequency
DC-DC output voltage
IEC61000-4-2 level 4 ESD protection
on pins defined in Table 1
V_DD voltage below which SUPL fault is asserted
V_DD voltage below which device will shutdown
V_DDI voltage below which device will shutdown
Shutdown Mode at T_ambient = 25 C
Shutdown Mode at T_ambient = 25°C
IOMC1 = IOMC2 = V_DDI;
CLKIN1 = CLKIN2 = GND; T_ambient= 25°C
Current consumption per card interface activated
V_CCUC = V_CCS1 = V_CCS2 = V_CCS3 = 5 V;
f_CLKIN1 = f_CLKIN2 = f_CLKUC = f_CLKS1 = 5 MHz;
I_CCUC = I_CCS1 = 55 mA; I_CCS2 = I_CCS3 = 2 mA;
T_ambient = 25°C
Shutdown Mode at 25°C
All Card V_CC = 5 V; CLKIN1 = CLKIN2 = 5 MHz; @ 25°C;
IOMC1 = IOMC2 = V_DDI
Time from
SHDN > V_IH to
INT < V_OL
Measured on CLKUC, CLKS1,CLKS2,CLKS3
If any card V_CC is 5 V
If all card V_CC is 3 V or 1.8 V
2.45
1.4
22
300
235
3.5
290
0.1
1
1.2
2.4
5.5
3.5
-8
MAX
2.7
2.0
1.6
28
650
UNIT
V
V
V
µA
µA
2 mA
280 mA
5 µA
300 µA
10 ms
1.4 MHz
MHz
V
8 kV
(1) Values highly dependent on external components like boost inductor and external rectifier. The specification is based on 75% boost
efficiency for max value and 85% efficiency for typical value
6.6 Electrical Characteristics—Card V_CC
V_DD = V_DDI = 3.3 V; L_VDD = 10 µH; C_VDD = 10 µF; C_VUP = 10 µF; T_A = –40°C to 85°C unless otherwise noted
PARAMETER
TEST CONDITIONS
MIN
TYP
V_CC = 5 V; I_CC ≤ 65 mA
4.75
5
V_CC
Card supply voltage
V_CC = 3 V; I_CC ≤ 65 mA
2.85
3
V_CC = 1.8 V; I_CC ≤ 45 mA
1.71
1.8
V_CC = 5 V ; 40 nA.s current spike
4.65
∆V_CC/∆I_CC
Load transient response
Current pulses I < 100 mA,
t < 400 ns
V_CC = 3 V ; 17.5 nA.s current spike
2.76
V_CC = 1.8 V ; 11.1 nA.s current spike
1.62
V_RIPPLE
Peak to peak ripple voltage
Measured on V_CC = 5 V, 3 V, 1.8 V
V_CC = 5 V
I_CC
Card supply Current
V_CC = 3 V
V_CC = 1.8 V
V_DO
Card LDO dropout voltage
I_CC = 65 mA
MAX
5.25
3.15
1.89
5.35
3.24
1.98
90
65
65
45
250
UNIT
V
V
V
V
mV
mA
mV
6.7 Electrical Characteristics—Card RST
V_DD = V_DDI = 3.3 V; L_VDD = 10 µH; C_VDD = 10 µF; C_VUP = 10 µF; T_A = –40°C to 85°C unless otherwise noted
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
V_{OL - RST}
V_{OH - RST}
t_{R - RST}
t_{F - RST}
Output Low voltage
Output high voltage
Rise time
Fall time
I_OL = -200 µA
I_OH = 150 µA
C_L = 30 pF ; 10% to 90%
C_L = 30 pF ; 90% to 10%
0.9 V_CC
0.1 V_CC
0.1
0.1
UNIT
V
V
µs
µs
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