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DRV8305_15 Datasheet, PDF (25/53 Pages) Texas Instruments – DRV8305 Three Phase Gate Driver With Current Shunt Amplifiers and Voltage Regulator
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DRV8305
SLVSCX2A – AUGUST 2015 – REVISED SEPTEMBER 2015
The device integrates VGS clamps inside the gate driver that will turn on when the GHX voltage exceeds SHX
voltage by a value that could be damaging to the FETs. If the voltage continues to rise, in spite of the clamps
turning on, the TDRIVE architecture ensures that the energy through the clamps is limited. If the high VGS
voltage is due to an abnormal condition on the charge pump, the charge pump overvoltage fault will trip in order
to protect the FETs from damage.
7.3.11.6 Gate Driver Faults
The DRV8305 protects against abnormal short to battery or short to ground conditions on the gate driver outputs
that could result in an incorrect state of the gate driver outputs. The gate driver integrates VGS comparators that
check the status of the gate driver output against the commanded PWM signal to ensure that they match. This
comparison occurs shortly after the expiration of the TDRIVE time. If the comparison indicates a mismatch, a
gate driver fault is indicated.
7.3.11.7 Reverse Battery Protection
The VCPH pin on the DRV8305 is designed to be able to supply an external load of up to 10 mA. This feature
allows implementation of an external reverse battery protection scheme using a MOS and a BJT. The MOS gate
can be driven through VCP through a current limiting resistor to limit the current drawn from VCP. The current
limit resistor must be sized not to exceed the maximum external load on VCPH.
The VDRAIN pin (sense) may also be protected against negative transients on it by use of a current limiting
resistor. The current limit resistor must be sized not to exceed the maximum current load on the VDRAIN pin.
BATTERY
VCPH
CP2H CP2L CP1H CP1L
PVDD
PVDD
VDRAIN
Figure 10. Typical Scheme for Reverse Battery Protection Using VCPH
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