UPSD3212C Datasheet, PDF (139/152 Pages) STMicroelectronics – Flash Programmable System Devices with 8032 Microcontroller Core and 16Kbit SRAM

UPSD3212C, UPSD3212CV
Table 106. Program, WRITE and Erase Times (5V Devices)
Symbol
Parameter
Min.
Typ.
Flash Program
8.5
Flash Bulk Erase⁽¹⁾ (pre-programmed)
3
Flash Bulk Erase (not pre-programmed)
5
t_WHQV3
Sector Erase (pre-programmed)
1
t_WHQV2
Sector Erase (not pre-programmed)
2.2
t_WHQV1
Byte Program
14
Program / Erase Cycles (per Sector)
100,000
t_WHWLO
Sector Erase Time-out
100
t_Q7VQV
DQ7 Valid to Output (DQ7-DQ0) Valid (Data Polling)⁽²⁾
Note: 1. Programmed to all zero before erase.
2. The polling status, DQ7, is valid tQ7VQV time units before the data byte, DQ0-DQ7, is valid for reading.
Max.
30
30
150
30
Table 107. Program, WRITE and Erase Times (3V Devices)
Symbol
Parameter
Min.
Typ.
Flash Program
8.5
Flash Bulk Erase⁽¹⁾ (pre-programmed)
3
Flash Bulk Erase (not pre-programmed)
5
t_WHQV3
Sector Erase (pre-programmed)
1
t_WHQV2
Sector Erase (not pre-programmed)
2.2
t_WHQV1
Byte Program
14
Program / Erase Cycles (per Sector)
100,000
t_WHWLO
Sector Erase Time-out
100
t_Q7VQV
DQ7 Valid to Output (DQ7-DQ0) Valid (Data Polling)⁽²⁾
Note: 1. Programmed to all zero before erase.
2. The polling status, DQ7, is valid tQ7VQV time units before the data byte, DQ0-DQ7, is valid for reading.
Max.
30
30
150
30
Unit
s
s
s
s
s
µs
cycles
µs
ns
Unit
s
s
s
s
s
µs
cycles
µs
ns
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