S70GL01GN00 Datasheet, PDF (80/83 Pages) SPANSION – 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology

Advance Information
AC Characteristics
Addresses
WE#
OE#
CE# or CE2#
Data
RESET#
555 for program PA for program
2AA for erase SA for sector erase
555 for chip erase
tWC
tWH
tAS
tAH
Data# Polling
PA
tGHEL
tWS
tCP
tCPH
tDS
tDH
tWHWH1 _{or 2}
tBUSY
tRH
A0 for program PD for program
55 for erase
30 for sector erase
10 for chip erase
DQ7# D_OUT
RY/BY#
Notes:
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. D_OUT is the data written to the device.
4. Waveforms are for the word mode.
Figure 20. Alternate CE# Controlled Write (Erase/Program)
Operation Timings
78
S70GL01GN00 MirrorBit^TM Flash
S70GL01GN00_00_A1 June 1, 2005