S70GL01GN00 Datasheet, PDF (47/83 Pages) SPANSION – 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology

Advance Information
START
Write Program
Command Sequence
Embedded
Program
algorithm
in progress
Data Poll
from System
Verify Data?
No
Yes
Increment Address
No
Last Address?
Yes
Programming
Completed
Note: See Table 10 on page 54 and Table 11 on
page 57 for program command sequence.
Figure 2. Program Operation
Program Suspend/Program Resume Command Sequence
The Program Suspend command allows the system to interrupt a programming
operation or a Write to Buffer programming operation so that data can be read
from any non-suspended sector. When the Program Suspend command is written
during a programming process, the device halts the program operation within 15
μs maximum (5μs typical) and updates the status bits. Addresses are not re-
quired when writing the Program Suspend command.
After the programming operation is suspended, the system can read array data
from any non-suspended sector. The Program Suspend command may also be is-
sued during a programming operation while an erase is suspended. In this case,
data may be read from any addresses not in Erase Suspend or Program Suspend.
If a read is needed from the Secured Silicon Sector area (One-time Program
area), then user must use the proper command sequences to enter and exit this
region. Note that the Secured Silicon Sector autoselect, and CFI functions are un-
available when program operation is in progress.
The system may also write the autoselect command sequence when the device
is in the Program Suspend mode. The system can read as many autoselect codes
as required. When the device exits the autoselect mode, the device reverts to the
Program Suspend mode, and is ready for another valid operation. See Autoselect
Command Sequence‚ on page 40 for more information.
June 1, 2005 S70GL01GN00_00_A1
S70GL01GN00 MirrorBit^TM Flash
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