S70GL01GN00 Datasheet, PDF (78/83 Pages) SPANSION – 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology

AC Characteristics
Advance Information
Addresses
CE# or CE2#
WE#
tOEH
OE#
DQ2 and DQ6
tDH
Valid Data
tAHT
tAS
tOEPH
tASO
tAHT
tCEPH
Valid
Status
(first read)
tOE
Valid
Status
(second read)
Valid
Status
(stops toggling)
Valid Data
RY/BY#
Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status
read cycle, and array data read cycle
Figure 18. Toggle Bit Timings (During Embedded Algorithms)
WE#
Enter
Embedded
Erasing
Erase
Suspend
Enter Erase
Suspend Program
Erase
Resume
Erase
Erase Suspend
Read
Erase
Suspend
Program
Erase Suspend
Read
Erase
DQ6
Erase
Complete
DQ2
Note: DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to
toggle DQ2 and DQ6.
Figure 19. DQ2 vs. DQ6
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S70GL01GN00 MirrorBit^TM Flash
S70GL01GN00_00_A1 June 1, 2005