S70GL01GN00 Datasheet, PDF (75/83 Pages) SPANSION – 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology

Advance Information
AC Characteristics
Program Command Sequence (last two cycles)
Addresses
tWC
555h
tAS
PA
tAH
CE# or CE2#
tCH
OE#
WE#
Data
tWP
tCS
tWPH
tDS
tDH
A0h
PD
RY/BY#
tBUSY
Read Status Data (last two cycles)
PA
PA
tWHWH1
Status
DOUT
tRB
VCC
tVCS
Notes:
1. PA = program address, PD = program data, D_OUT is the true data at the program address.
2. Illustration shows device in word mode.
Figure 14. Program Operation Timings
V_HH
ACC
V_IL or V_IH
t_VHH
t_VHH
V_IL or V_IH
Figure 15. Accelerated Program Timing Diagram
Notes:
1. Not 100% tested.
2. CE# (or CE2#), OE# = V_IL
3. OE# = V_IL
4. See Figure 9, on page 68 and Table 13 on page 68 for test specifications.
June 1, 2005 S70GL01GN00_00_A1
S70GL01GN00 MirrorBit^TM Flash
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