S70GL01GN00 Datasheet, PDF (71/83 Pages) SPANSION – 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology

Advance Information
AC Characteristics
Read-Only Operations for Each S29GL512N
Parameter
JEDEC Std.
Description (Note 6)
Test Setup
Speed Options
110
Unit
t_AVAV
t_RC Read Cycle Time
Min
110
t_AVQV
t_ELQV
t_ACC
t_CE
Address to Output Delay (Note 2)
Chip Enable to Output Delay (Note 3)
V_IO = V_CC = 3 V Max
110
ns
Max
110
t_PACC Page Access Time
Max
25
t_GLQV
t_OE Output Enable to Output Delay
Max
35
t_EHQZ
t_GHQZ
t_DF Chip Enable to Output High Z (Note 1)
t_DF
Output Enable to Output High Z
(Note 1)
Max
20
ns
Max
20
t_AXQX
t_OH
Output Hold Time From Addresses, CE# or
OE#, Whichever Occurs First
Min
0
t_OEH
Output Enable Hold Time
(Note 1)
Read
Toggle and Data#
Polling
Min
0
ns
Min
10
t_CEH Chip Enable Hold Time
Read
Min
35
Notes:
1. Not 100% tested.
2. CE# (CE2#), OE# = V_IL
3. OE# = V_IL
4. See Figure 9, on page 68 and Table 13 on page 68 for test specifications.
5. Unless otherwise indicated, AC specifications 110 ns speed options are tested with V_IO = V_CC = 3 V.
6. CE# can be replaced with CE2# when referring to the second die in the package.
June 1, 2005 S70GL01GN00_00_A1
S70GL01GN00 MirrorBit^TM Flash
69