S70GL01GN00 Datasheet, PDF (74/83 Pages) SPANSION – 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology

Advance Information
AC Characteristics
Erase and Program Operations for Each S29GL512N
Parameter
Description
JEDEC Std.
(Note 6)
t_AVAV
t_AVWL
t_WLAX
t_WC
t_AS
t_ASO
t_AH
t_AHT
Write Cycle Time (Note 1)
Address Setup Time
Address Setup Time to OE# low during toggle bit polling
Address Hold Time
Address Hold Time From CE# or OE# high
during toggle bit polling
t_DVWH
t_WHDX
t_GHWL
t_DS
t_DH
t_CEPH
t_OEPH
t_GHWL
Data Setup Time
Data Hold Time
CE# High during toggle bit polling
Output Enable High during toggle bit polling
Read Recovery Time Before Write
(OE# High to WE# Low)
t_ELWL
t_WHEH
t_WLWH
t_WHDL
t_CS
t_CH
t_WP
t_WPH
CE# Setup Time
CE# Hold Time
Write Pulse Width
Write Pulse Width High
Write Buffer Program Operation (Note 2, and Note 3)
Speed Options
110
Min
110
Min
0
Min
15
Min
45
Min
0
Min
45
Min
0
Min
20
Min
20
Min
0
Min
0
Min
0
Min
35
Min
30
Typ
240
Effective Write Buffer Program Operation (Note 2, and
Note 4)
Per Word
Typ
15
Accelerated Effective Write Buffer Program Operation
t_WHWH1 t_WHWH1 ^{(Note 2, and Note 4)}
Per Word
Typ
13.5
Program Operation (Note 2)
Word
Typ
60
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
µs
Accelerated Programming Operation (Note 2)
Word
Typ
µs
54
t_WHWH2
t_WHWH2 Sector Erase Operation (Note 2)
t_VHH V_HH Rise and Fall Time (Note 1)
t_VCS V_CC Setup Time (Note 1)
t_BUSY Erase/Program Valid to RY/BY# Delay
Typ
0.5
sec
Min
250
ns
Min
50
µs
Min
90
ns
Notes:
1. Not 100% tested.
2. See the Erase And Programming Performance‚ on page 79 for more information.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
5. Unless otherwise indicated, AC specifications the 110 ns speed options are tested with V_IO = V_CC = 3 V.
6. CE# can be replaced with CE2# when referring to the second die in the package.
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S70GL01GN00 MirrorBit^TM Flash
S70GL01GN00_00_A1 June 1, 2005