S70GL01GN00 Datasheet, PDF (50/83 Pages) SPANSION – 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology

Advance Information
Figure 4 illustrates the algorithm for the erase operation. Refer to the Erase and
Program Operations table in the AC Characteristics section for parameters, and
Figure 16, on page 74 for timing diagrams.
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
No
Data = FFh?
Embedded
Erase
algorithm
in progress
Yes
Erasure Completed
Notes:
1. See Table 10 on page 54 and Table 11 on page 57 for
program command sequence.
2. See the section on DQ3 for information on the sector
erase timer.
Figure 4. Erase Operation
Erase Suspend/Erase Resume Commands
The Erase Suspend command, B0h, allows the system to interrupt a sector erase
operation and then read data from, or program data to, any sector not selected
for erasure. This command is valid only during the sector erase operation, includ-
ing the 50 µs time-out period during the sector erase command sequence. The
Erase Suspend command is ignored if written during the chip erase operation or
Embedded Program algorithm.
When the Erase Suspend command is written during the sector erase operation,
the device requires a typical of 5 μs (maximum of 20 μs) to suspend the erase
operation. However, when the Erase Suspend command is written during the sec-
tor erase time-out, the device immediately terminates the time-out period and
suspends the erase operation.
After the erase operation is suspended, the device enters the erase-suspend-read
mode. The system can read data from or program data to any sector not selected
for erasure. (The device erase suspends all sectors selected for erasure.) Reading
at any address within erase-suspended sectors produces status information on
DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2 together, to determine if
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S70GL01GN00 MirrorBit^TM Flash
S70GL01GN00_00_A1 June 1, 2005